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| LL700, LL700A SILICON EXPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES for Ordinary Wave Detection for Super High Speed Switching Features * Low forward rise voltage (VF) and satisfactory wave * detection efficiency () * Small temperature coefficient of forward characteristic * Extremely low reverse current IR Absolute Maximum Ratings (Ta = 25oC) Parameter Reverse Voltage (DC) Peak Reverse Voltage Forward Current (DC) Peak Forward Current Junction Temperature Storage Temperature Range LL700 LL700A LL700 LL700A Symbol VR VRM IF IFM Tj TS Rating 15 30 15 30 30 150 125 -55 to +125 Unit V V mA mA O O C C Characteristics at Ta = 25oC Parameter Forward Voltage (DC) Reverse Current (DC) LL700 LL700A Symbol VF1 VF2 IR Ct trr Conditions IF = 1mA IF = 30mA VR = 15V VR = 30V VR = 1V, f = 1MHz IF = IR = 10mA Irr = 1mA, RL = 100 Vin = 3V(peak), f = 30MHz RL = 3.9k, CL = 10pF Min Typ 1.3 1 60 Max 0.4 1 100 150 V nA pF ns % Unit Terminal Capacitance Reverse Recovery Time* Detection Efficiency Note: (1) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on Note: (1) the charge of a human body and the leakage of current from the operating equipment. Note: (2) Rated input / output frequency: 2,000MHz. Note: (3) *: trr measuring instrument SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 07/02/2003 |
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